Current sensor packages with through hole in semiconductor

ABSTRACT

A semiconductor package includes a semiconductor die. A through hole in the semiconductor package and semiconductor die extends from one side of the semiconductor package and die to an opposite side of the semiconductor package and die. The through hole is configured to receive a current-carrying conductor there through. At least one current sensor is formed in, or on, the semiconductor die and configured to sense current flow in the current-carrying conductor received in the through hole.

TECHNICAL FIELD

This description relates to current sensor packages for monitoringcurrent flow in electronic circuits.

BACKGROUND

In many semiconductor device and circuit applications (e.g., powercircuits such as invertors, switches, transformers, etc.), it isdesirable to measure current flows through the semiconductor devices andcircuits. Semiconductor device and circuit packages are become smallerand smaller (e.g., because of increasing miniaturization). For example,many high voltage electronics packages or systems (“HV systems”) are nowsize, space or weight constrained. Compact alternating current (AC) anddirect current (DC) sensors are required, which minimize power losses inthe system while improving measurement accuracy. Apart from the size andperformance requirements for use with HV systems, the current sensorsare also constrained to function under conditions of HV galvanicisolation.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a block diagram illustrating an example sensor packageconfigured for sensing current flow in a current-carrying conductor.

FIGS. 2A, 3A, 4A, 5A, 6A, 7A, 8A, and 9A are cross sectional views ofcurrent sensor packages deployed to sense current flow in a conductorwire.

FIGS. 2B, 3B, 4B, 5B, 6B, 7B, 8B, and 9B are plan views of currentsensor packages deployed to sense current flow in a conductor wire.

FIG. 10 illustrates an example method for sensing current flow in aconductor wire.

DETAILED DESCRIPTION

In general, a semiconductor device and/or circuits package is a metal,plastic, epoxy, glass and/or ceramic casing containing one or moresemiconductor electronic and/or circuit components. Individual discretecomponents are typically disposed in and/or on a semiconductor substrate(e.g., a silicon wafer, semiconductor region and/or epitaxial layer(s))before being cut as a die and assembled (e.g., molded) in a package. Thepackage provides protection against impact and corrosion, and holds thecontact pins and/or leads that are used to connect from externalcircuits to the die and dissipate heat produced in the package.

Compact semiconductor device and/or circuit packages (sensor packages)that include current sensors are described herein. The sensor packagesmay be used for measuring current flow in other circuits (hostcircuits). The sensor packages may be configured, for example, to sensecurrent flowing in current-carrying input and/or output wires of thehost circuits. The host circuits may include, for example, electroniccircuits for inverters, power distribution, starter-generators,servo-regulators, line connected power supplies, solar energy powersupplies, uninterruptible power supply (UPS), robotics, etc.

A sensor package may be included in, and/or integrated with, a hostcircuit. In example implementations, the sensor package may be mountedon a circuit board of the host circuit. The sensor package may bedisposed on the circuit board of the host circuit to sense currentflowing in a current-carrying input and/or output wire of the hostcircuit having, for example, an input and/or output terminal at thecircuit board.

The sensor package (including the current sensor) may help in providinggalvanic isolation between the electrical components and functions ofthe semiconductor devices and electronic components in the host circuit.

A compact current sensor may be formed in, and/or supported on, asemiconductor substrate (e.g., a silicon wafer, semiconductor regionand/or epitaxial layer(s)) or made of other solid state materials. Thecurrent sensors may include any type of current sensors including, forexample, Hall effect sensors, inductive current sensors (e.g., Rogowskicurrent sensors), flux gate sensors, etc.

Sensor packages that include one or both of two or more types of compactcurrent sensors (namely, Hall effect current sensors and Rogowskicurrent sensors) are described in further detail herein. The currentsensors described herein may be included in, supported on, or coupled tothe semiconductor die.

A Hall effect current sensor may be based on the Hall Effect (i.e., theproduction of a voltage difference (the Hall effect voltage) across acurrent carrying sensor element (e.g., a Hall slab or plate) in presenceof a magnetic field, the voltage difference being perpendicular to bothcurrent and the magnetic field). A Hall effect current sensor includesintegrated circuits that sense current flow in a current-carryingconductor by measuring the proportional magnetic field generated by thecurrent flow in the current-carrying conductor. The Hall effect currentsensor may be used to sense direct current (DC) flowing through thecurrent-carrying conductor (that produces the proportional magneticfield).

A Hall effect current sensor including one or more current sensorelements (e.g., Hall slabs or plates) may be fabricated, for example, bydopant diffusion, in a semiconductor die. Depending on an orientation ofthe current sensor elements (e.g., Hall slabs or plates) relative to theorientation of the semiconductor die (and the direction of current flowin the current-carrying conductor), the Hall effect current sensor maybe referred to, for example, as a horizontal Hall effect current sensoror a vertical Hall effect current sensor.

In a horizontal Hall effect current sensor, a current sensor element(e.g., a Hall slab or plate) may be generally aligned parallel to themajor surfaces of the semiconductor die and configured to sense currentflow components parallel to the major surfaces of the semiconductor die.The Hall slab or plate of the horizontal Hall effect current sensor maybe formed, for example, by shallow dopant diffusions into thesemiconductor material of the semiconductor die.

In a vertical Hall effect current sensor, a current sensor element(e.g., Hall slab or plate) may be generally aligned perpendicular to themajor surface of the semiconductor die and configured to sense currentflow components normal to the major surfaces of the semiconductor die.The Hall slab or plate of the vertical Hall effect current sensor may beformed, for example, by deep dopant diffusions into the semiconductormaterial of the semiconductor die. A vertical Hall effect current sensormay include two such vertically oriented Hall slab or plates, orientedorthogonally to one another, to provide three axis sensing capability(or to account for current flow that is not perfectly normal to themajor surfaces of the semiconductor die).

An inductive current sensor (e.g., a Rogowski current sensor) mayinvolve measurements of voltages induced in a Rogowski coil (i.e., ahelical coil wrapped around a conductor in which a current is flowing)to sense alternating current (AC) flowing through the conductor. TheRogowski current sensor includes integrated circuits that sense currentflow in a current-carrying conductor by measuring the proportionalvoltages induced in the Rogowski coil.

In example implementations, a current sensor described herein isdeployed to sense and measure current flow in a conductor (i.e., acurrent-carrying conductor) in situ in the host circuit. Thecurrent-carrying conductor may be an internal conductor (e.g., a wireconnecting two internal components in the host circuit) or may be aninternal-external conductor (e.g., an input and/or output wire extendingto the outside of the host circuit package and/or circuit board).

In example implementations, a current sensor described herein (e.g., aHall effect current sensor, or a Rogowski current sensor) is fabricatedon a semiconductor die, which is included in the sensor package. A Halleffect current sensor may, for example, include a set of high densitycoils (and optional ferro magnetic core) attached to a top surface ofthe semiconductor die. A Rogowski current sensor may, for example,include a set of Rogowski coils disposed or formed on the top surface ofthe semiconductor die.

In example implementations, the semiconductor die of the current sensor(semiconductor die) may be placed next to, surround, or enclose thecurrent-carrying conductor in which current flow is to be sensed ormonitored. The semiconductor die may be packaged in a sensor package(e.g., a TO-220 style electronic component package). In exampleimplementations, the sensor package (and the semiconductor die) mayinclude an opening (e.g., a pass through hole) extending across thesensor package from one side of the sensor package to the other side ofthe sensor package. The current-carrying conductor may be disposed inthe pass through hole to be next to, or surrounded by, the semiconductordie.

FIG. 1 is a block diagram illustrating a cross sectional view of anexample current-sensor semiconductor die (e.g., semiconductor die 130)packaged (e.g., molded) in a sensor package 160. Sensor package 160 may,for example, be a chip package (e.g., a TO-220 package) includingsemiconductor die 130 with lead frames (e.g., lead frame 140) that cancarry signals from the die to the outside. Semiconductor die 130 may becoupled to a current sensor 132 (e.g., a Hall effect current sensor, aRogowski current sensor). Semiconductor die 130 has an opening or passthrough hole 131 (also can be referred to as an opening) that extendsfrom one side of the semiconductor die to an opposite side of thesemiconductor die 130 (such that the pass through hole 131 is alignedalong a line orthogonal to (or normal to) a primary plane aligned alonga major surface of semiconductor die 130). Pass through hole 131 mayinclude, or be otherwise aligned with, a corresponding pass through hole133 in lead frame 140 attached to semiconductor die 130. Sensor package160 has an opening or pass through hole 161 (also can be referred to asan opening) that extends from one side of the sensor package to anopposite side of the sensor package. Holes 131 and 161 may have the sameor different cross-sectional shapes and/or sizes (e.g., different or thesame cross-sectional diameters). Pass through hole 131 in thesemiconductor die (and pass through hole 133 in lead frame 140) may bealigned (e.g., coaxially aligned) with pass through hole 161 so that acurrent-carrying conductor (e.g., a wire 120) can extend from one sideof the sensor package to the other side of the sensor package via passthrough holes 131, 133 and 161. The sizes (e.g., diameters) of the passthrough holes may be larger than a size (e.g., diameter) of wire 120 toprovide a clearance (e.g., air gap 135) between the hole sidewalls andthe diameter of wire 120 so that wire 120 can be threaded through theholes from one side of the sensor package to the other side of thesensor package. Wire 120 threaded through the holes in the sensorpackage may, for example, carry a current (e.g., current 122) which canbe sensed and/or monitored by the current sensor in semiconductor die130.

Semiconductor die 130 (including the active and passive integratedcircuit elements and the physical holes therein) and current sensorpackage 160 may be fabricated using processes that are the same as, orsimilar to, semiconductor device fabrication and packaging processesused in the microelectronics industry. In example implementation,several semiconductor die may be fabricated on a silicon wafer. Thesilicon wafer may be diced or singulated (e.g., using plasmasingulation, or laser cutting) to pick up individual semiconductor die130, which may be then packaged in current sensor package 160. Incurrent sensor package 160, a mold compound (e.g., epoxy 165) may coveror coat exposed surfaces semiconductor die 130. Epoxy 165 may, in someinstances, coat or line the sidewalls of pass through hole 131, 133, and161 to a thickness that leaves clearance for threading wire 120 throughthe holes.

In example implementations, the current sensor package 160 may bemounted on a same circuit board as the host circuit. In suchimplementations, current sensor package 160 (and semiconductor die 130and current sensor 132 therein) is galvanically isolated from thecurrent-carrying conductor (e.g., wire 120). Wire insulation and/orother insulating material 134 (e.g., disposed in hole 131 ofsemiconductor die 130) may galvanically isolate the current-carryingconductor from the current sensor, the semiconductor die, and thecurrent sensor package).

In example implementations, semiconductor die of the current sensor mayinclude signal processing circuits (e.g., amplifiers, integrators,summers, etc.) for processing signals (e.g., Hall effect voltagesignals) sensed by the current sensor. In example implementations anoutput of the current sensor (e.g., a voltage differential from a Halleffect sensor) may be used as feedback, for example, to controloperation of the host circuit.

An example sensor package deployment includes a current carryingconductor disposed at least partially through the sensor package (e.g.,through a hole in the sensor package). A current sensor is disposed inthe sensor package and configured to sense current flow in the currentcarrying conductor. Electrical insulation is disposed between thecurrent carrying conductor and the sensor package. The electricalinsulation confines current flow in the current carrying conductor tothe current carrying conductor and blocks passage of current flow fromthe current carrying conductor (e.g., by leakage) to conductive pathways(metallization and conductive interconnections) of the sensor packageitself.

FIGS. 2A, 3A, 4A, 5A, 6A, 7A, 8A, and 9A are cross sectional views ofcurrent sensor packages deployed to sense current flowing a conductorwire, and FIGS. 2B, 3B, 4B, 5B, 6B, 7B, 8B, and 9B are plan views ofcurrent sensor packages deployed to sense current flowing a conductorwire (e.g., sensor packages 260, 360, 460, 560, 660, 760, 860 and 960).The current sensor packages can be deployed to sense current flowingthrough a conductor (e.g., a wire) of a host circuit (e.g., anelectronic circuit for an inverter, power distribution,starter-generator, servo-regulator, line connected power supply, solarenergy power supply, uninterruptible power supply (UPS), robotics,etc.).

Each of the current sensor packages shown in FIGS. 2A through 9A (e.g.,sensor packages 260, 360, 460, 560, 660, 760, 860 and 960) is a passthrough package with an opening or hole (e.g., hole 161, FIG. 1)extending from one side of the package to an opposite side of thepackage. Current sensing elements (e.g., of a Hall effect currentsensor, a Rogowski current sensor, etc.) are disposed in the sensorpackage around the hole or opening. Each of the current sensor packagesmay be deployed so that the current-carrying conductor (current flowingthrough which is to be sensed) passes through the opening or hole (e.g.,hole 161, FIG. 1) from one side of the package to the opposite side ofthe package.

In each of the sensor package deployments shown in FIGS. 2A through 9A,the host circuit may include a printed circuit board (e.g., a two-sidedcircuit board 150 (FIGS. 2A through 8B), or a one-sided circuit board950 (FIGS. 9A and 9B)).

In the sensor package deployments (of sensor packages 260, 360, 460,560, 660, 760, 860) shown in FIGS. 2A through 8B, the conductor (e.g.,wire 120) in which current flow is to be sensed may, for example, haveone end affixed at a terminal 153 on a first side of two-sided circuitboard 150. Wire 120 may extend from terminal 153 through an opening orhole 151 in the circuit board to the other side (second side) of thecircuit board. Terminal 153 may be formed, for example, by soldermaterial disposed on contact pads 152 on the first side of board. Hole151 may be filled with insulating material (e.g., an epoxy, a rubberand/or plastic grommet, etc.). Wire 120 may be, or may include, aninsulated electrical wire with an insulating wire jacket or cover 121made of insulating materials such as plastic, rubber-like polymers,and/or varnish.

FIGS. 2A and 2B show an example deployment of a current sensor package260 on circuit board 150 to sense current flow in wire 120. Sensorpackage 260 may, for example, be a chip package (e.g., a TO-220 package)including a semiconductor die 230 with lead frames (e.g., lead frame140) that can carry signals from the die to the outside. In sensorpackage 260, a mold compound (e.g., epoxy 265) may cover or coat exposedsurfaces semiconductor die 230. Sensor package 260 may be mounted on oneside of circuit board 150 with lead frame 140 connected to one or moreterminals such as terminal 154 (which may be formed by solder and/orother conductive material) on the outside of circuit board 150.

In example implementations, current sensor package 260 may include aHall effect current-sensor semiconductor die 230 to which magnetic fieldconcentrator coils 110 are attached. Magnetic field concentrator coils110 may optionally include a ferrite core 111.

Semiconductor die 230 (and coils 110) may include an opening or hole 231extending from one side of the semiconductor die to the opposite side ofthe semiconductor die. Opening 131 may be aligned (e.g., coaxiallyaligned) with opening 261 in sensor package to accommodate wire 120.Wire 120 may extend from terminal 153 on circuit board 150 to theoutside of sensor package 260 (e.g., toward portions of the host circuit(not shown)) through opening 231 in the semiconductor die and opening261 in sensor package 160. In example implementations, wire 120 isgalvanically isolated from sensor package 260 by insulating materials(including, for example, epoxy mold compound used in packaging and/orinsulating wire jacket 121) disposed in openings 231, 151 and 261. Insome instances, some segments of wire 120 may be galvanically isolatedfrom sensor package 260 by air spacing or gaps between wire 120 and thesurfaces of sensor package 260 in openings 231, 151 and 261.

Hall effect current-sensor semiconductor die 230 may include active andpassive integrated circuit elements (not shown) for sensing andprocessing Hall effect voltage signals in the semiconductor die that areresponsive to current flow in wire 120.

Magnetic field concentrator coils 110 may focus magnetic flux lines(which are generated by current flow in wire 120) for measurement by thesensing elements of the semiconductor die. Focusing the magnetic fluxlines may serve to enhance the device's sensitivity.

One or more bonded wire connections such as bonded wire connection 141(which may be bonded to contact pads (not shown) on semiconductor die230) may carry signals from semiconductor die 230 to the outside vialead frame 140.

Lead frame 140 may extend from inside of sensor package 260 to a freeend for mounting on circuit board 150. The free end of lead frame 140may, for example, be attached to circuit board 150 at terminal 154formed, for example, by solder material or other conductive adhesivematerial. In example sensor package deployments, lead frame 140extending from inside of the sensor package may be geometrically bentfor attachment to circuit board so that the sensor package has anorientation (e.g., generally parallel to circuit board 150) in which thesensor package openings (e.g., openings 231 and 261) are axially aligned(e.g., generally perpendicular to circuit board 150) with wire 120. Inan alternate sensor package deployment configuration, lead frame 140 maynot be geometrically bent and may extend perpendicularly from thecircuit board 150. In this alternate sensor package deploymentconfiguration, wire 120, nonetheless, passes through sensor packageopening 261 (which may be aligned generally parallel to circuit board150).

In some implementations, as shown in FIG. 2A, coils 110 may be attachedto, or fabricated on, a surface 233 of semiconductor die 230.

In some implementations, (as shown, e.g., in FIG. 3A, FIG. 6A and FIG.9A) coils 110 may be inserted (partially or fully) and soldered into acutout in the die using, for example, a pick and place tool. Fabricatingor inserting coils 110 in the die as shown in may facilitateinterconnects between coils 110 and the top surface of the die and mayresult in a lower package height.

FIGS. 3A and 3B show an example current sensor package 360 including aHall effect current-sensor semiconductor die 330 in which magnetic fieldtransducer or concentrator coils 110 are inserted in a cutout 333 in thedie. Sensor package 360, like sensor package 260, may, for example, be aTO-220 package with lead frames (e.g., lead frame 140) that can carrysignals from the die to the outside. In sensor package 360, a moldcompound (e.g., epoxy 365) may cover or coat exposed surfacessemiconductor die 330. A vertical height (in a direction generallyperpendicular to circuit board 150) of current sensor package 360 withcoils 110 inserted cutout 333 in semiconductor die 330 is seen (FIG. 3A)to be smaller than the vertical height of current sensor package 260with coils 110 attached to surface 233 semiconductor die 230 (FIG. 2A).

FIGS. 4A and 4B show an example deployment of another current sensorpackage 460 on circuit board 150 to sense current flowing in wire 120.Current sensor package 460 may include a Rogowski-type sensor withRogowski coils 410 formed on, or in, a semiconductor die 430 (FIG. 4B).Semiconductor die 430 includes an opening or hole 431 extending from oneside of the semiconductor die to the opposite side of the semiconductordie. In sensor package 460, a mold compound (e.g., epoxy 465) may coveror coat exposed surfaces semiconductor die 430.

Sensor package 460, like sensor packages 260 and 360, may, for example,be a TO-220 package with lead frames (e.g., lead frame 140) that cancarry signals from the die to the outside. Semiconductor die 430 mayinclude active and passive integrated circuit elements (not shown) forsensing and processing Rogowski coil signals in the semiconductor diethat are responsive to current flow in wire 120. Bonded wire connection141 (which may be bonded to contact pads (not shown) on semiconductordie 430) may carry signals from semiconductor die 430 to the outside vialead frame 140. Like sensor package 260 (FIG. 2A), sensor package 460may be mounted on one side of circuit board 150 with lead frame 140connected to a terminal 154 on the outside of circuit board 150. Opening431 may be aligned (e.g., coaxially aligned) with opening 461 in thesensor package to accommodate wire 120. Wire 120 is galvanicallyisolated from sensor package 460 by insulating materials (including, forexample, insulating wire jacket 121) disposed in openings 431, 151 and461.

In addition to the galvanic isolation provided by insulating materialsbetween wire 120 and sensor package components, high voltage hazard inthe sensor package deployments may be reduced, for example, byincreasing a creepage distance between conductive elements over theinsulating surface of circuit board 150. As shown for example in FIG.4A, the creepage distance D1 between terminal 153 and terminal 154 maybe increased by introducing a gap, a slot, and/or a cut 155 in circuitboard 150 between terminal 153 and terminal 154.

In example implementations, as shown in FIG. 4B, semiconductor die 430may have a hexagonal shape cross section (e.g., in a plane parallel to amajor surface of the die), which may be conducive to alignment ofcomponents (including, e.g., another die (not shown)) when assemblingsensor package 460. Since hexagonal close packing is mathematically themost efficient packing shape, use of hexagonal-shape semiconductor die430 can maximize the number of die that are obtained per wafer (e.g.,when fabricating circuits having a generally “round” shape such as thecircular inductive coils printed in the die).

FIGS. 5A and 5B show an example deployment of another current sensorpackage 560 on circuit board 150 to sense current flowing in wire 120.Current sensor package 560 may include a vertical Hall effect currentsensor 511 (with a vertical orientation of Hall plates) in combinationwith Rogowski coils 510 formed on, or in, a semiconductor die 530.Vertical Hall effect current sensor 511 may, for example, integrateactive and passive integrated circuit elements (e.g., a Hall effectvoltage generator, a small-signal amplifier, chopper stabilization, aSchmitt trigger, and one or more NMOS outputs, etc.) on semiconductordie 530. The combination of the vertical Hall sensor and the Rogowskicoils may allow current sensor package 560 to be used to concurrentlysense both AC and DC current flows through wire 120.

Like semiconductor dies 230, 330 and 430, semiconductor die 530 mayinclude an opening or hole 531 extending from one side of thesemiconductor die to the opposite side of the semiconductor die andaligned with opening 561 in semiconductor package 560 to accommodatewire 120 there through.

Sensor package 560, like sensor packages 260, 360 and 460, may, forexample, be a TO-220 package with lead frames (e.g., lead frame 140)that can carry signals from the die to the outside. Semiconductor die530 may include active and passive integrated circuit elements forsensing and processing the vertical sensor (Hall effect) and Rogowskicoil signals in the semiconductor die that are responsive to currentflow in wire 120. In sensor package 560, a mold compound (e.g., epoxy565) may cover or coat exposed surfaces semiconductor die 530.

Bonded wire connection 141 (which may be bonded to contact pads (notshown) on semiconductor die 530) may carry signals from semiconductordie 530 to the outside via lead frame 140. Like sensor packages 260, 360and 460, sensor package 560 may be mounted on one side of circuit board150 with lead frame 140 connected to a terminal 154 on the outside ofcircuit board 150.

In some implementations, a current sensor may be assembled in a waferlevel chip scale package (WLCSP) or an optical device chip scale package(ODCSP) using, for example, solder bumps, solder interconnects, or asolderable surface.

FIGS. 6A and 6B show an example deployment of a wafer level chip scalepackage (WLCSP) (e.g., sensor package 660) on circuit board 150 to sensecurrent flowing in wire 120. Sensor package 660 may include a Halleffect sensor semiconductor die 630 with magnetic field transducer orconcentrator coils 110 (optionally including ferrite core 111) insertedin a cutout in semiconductor die 630. Coils 110 (e.g., copper coils) maybe soldered into the die using a pick/place tool prior to when backsideprotective coatings are attached. A surface of semiconductor die 630 andcoils 110 may be coated with a backside coating material (e.g., epoxycoating layer 665). In example implementations, coils 110 may befabricated in situ in, or on, the die.

Semiconductor die 630 (and coils 110) may include an opening or passthrough hole 631 extending from one side of the semiconductor die to theopposite side of the semiconductor die. Hole 631 may be aligned withhole 661 in sensor package 660 that extends from one side of the sensorpackage to the opposite side of the sensor package to accommodate wire120 there through.

Semiconductor die 630 (like the other semiconductor dies 230-530) mayinclude active and passive integrated circuit elements (not shown) forsensing and processing Hall effect voltage signals in the semiconductordie that are responsive to current flow in wire 120. Solder bumps 640(which may be bonded or soldered to contact pads 641 on die 430 andcontact pads 642 on circuit board 150) may carry signals fromsemiconductor die 630 (and coil 110) to the outside. In someimplementations, semiconductor die 630 may include through-silicon-vias(TSVs) (not shown) that may assist in the routing of the electricalcircuits and interconnections, for example, between the top and bottomsides of semiconductor die 630.

FIGS. 7A and 7B show an example deployment of a modified optical devicechip scale package (ODCSP) (e.g., sensor package 760) on circuit board150 to sense current flowing in wire 120. This package is an example ofa semiconductor die which has electrically conductive paths (not shown)on the sides of the semiconductor die 730 which connect the top andbottom major surfaces, or contact pads 741 to 743. Sensor package 760may include a Hall effect current-sensor semiconductor die 730 to whichmagnetic field transducer or concentrator coils 110 (optionallyincluding ferrite core 111) may be soldered on contact pads 743. Coils110 may be soldered on contact pads 743 using a pick/place tool eitherbefore or after mounting current sensor package 760 on circuit board150. In sensor package 760, a mold compound (e.g., epoxy 765) may coveror coat exposed surfaces semiconductor die 730.

Semiconductor die 730 (and coils 110) may include a pass through openingor hole 731 extending from one side of the semiconductor die to theopposite side of the semiconductor die to accommodate wire 120.

Semiconductor die 730 (like the other semiconductor dies 230-630) mayinclude active and passive integrated circuit elements (not shown) forsensing and processing Hall effect voltage signals in the semiconductordie that are responsive to current flow in wire 120. Solder bumps 740(which may be bonded or soldered to contact pads 741 on die 730 andcontact pads 742 on circuit board 150) may carry signals fromsemiconductor die 730 (and coil 110) to the outside.

FIGS. 8A and 8B show an example deployment of a modified molded opticaldevice chip scale package (ODCSP) (e.g., sensor package 860) on circuitboard 150 to sense current flow in wire 120. Sensor package 860 mayinclude a Hall effect current-sensor semiconductor die 830 packaged in amolding 865. Magnetic field transducer or concentrator coils 110(optionally including ferrite core 111) may be soldered on contact pads843 on semiconductor die 830 using a pick/place tool either before orafter mounting current sensor package 860 on circuit board 150. Asurface of semiconductor die 830 and coils 110 may be coated with abackside coating material (e.g., epoxy coating layer 865).

Semiconductor die 830 (and coils 110) may include a pass through openingor hole 831 extending from one side of the semiconductor die to theopposite side of the semiconductor die to accommodate wire 120. Hole 831may be aligned with hole 861 in sensor package 860 that extends from oneside of the sensor package to the opposite side of the sensor package toaccommodate wire 120 there through.

Semiconductor die 830 (like the other semiconductor dies 230-730) mayinclude active and passive integrated circuit elements (not shown) forsensing and processing Hall effect voltage signals in the semiconductordie that are responsive to current flow in wire 120. Solder bumps 840(which may be bonded or soldered to contact pads 841 on die 830 andcontact pads 842 on circuit board 150) may carry signals fromsemiconductor die 830 (and coils 110) to the outside. Electricalcontacts on the edges of semiconductor die 830 are used to connect theelectrical pads 841 to 843.

In the various deployments of sensor packages (e.g., sensor packages260, 360, 460, 560, 660, 760, and 860) described above (with referenceto, for example, FIGS. 2A through 8A and FIGS. 2B through 8B), a freeend of wire 120 may be inserted or passed through the opening (e.g.,opening 231) in the semiconductor die (e.g., after the sensor package isplaced on circuit board 150, which is a two-sided circuit board) andpassed through opening 151 from one side of the circuit board to theother side of the circuit board before being soldered to form terminal153 on circuit board 150.

FIG. 9A and FIG. 9B show an example deployment of a Wafer Level ChipScaled Package (WLCSP) (e.g., current sensor package 960) on singlesided circuit board 950 to sense current flow in wire 120. Currentsensor package 960 may include a Hall effect current-sensorsemiconductor die 930 that includes magnetic field transducer orconcentrator coils 110 (optionally including ferrite core 111). Asurface of semiconductor die 930 and coils 110 may be coated with abackside coating material (e.g., epoxy coating layer 965).

Opening 931 in semiconductor die 930 (and coil 110) may includeconductive material (e.g., solder) 932 bounded by an upper contact pad171 and a lower contact pad 172. Wire 120 may be attached to uppercontact pad 171 using solder material (e.g., interconnect 173), forexample, by a customer. A current path (e.g., current path 180) throughwire 120 (and through the conductive material in opening 931) acrosssemiconductor die 930/sensor package 960 may be completed by a solderbump connection 176 between lower contact pad 172 and a contact pad 177on circuit board 950. In some implementations, semiconductor die 930 mayinclude through-silicon-vias (TSVs) (not shown) that may assist in therouting of the electrical circuits and interconnections, for example,between the top and bottom sides of semiconductor die 930.

Semiconductor die 930 (like the other semiconductor dies 260-860) mayinclude active and passive integrated circuit elements (not shown) forsensing and processing Hall effect voltage signals in the semiconductordie that are responsive to current flow in wire 120. Solder bumps 940(which may be bonded or soldered to contact pads 941 on die 730 andcontact pads 942 on circuit board 950) may carry signals fromsemiconductor die 930 (and coils 110) to the outside.

FIG. 10 shows an example method 1000 for sensing current flow in aconductor wire. Method 1000 includes coupling a current sensor to asemiconductor die (1010). The current sensor may be, fully or partially,disposed in and/or on the semiconductor die. The semiconductor die has apass through hole extending from one side of the semiconductor die to anopposite side of the semiconductor die. Method 1000 further includesdisposing the semiconductor die about the conductor wire, for example,by passing the conductor wire passing through the hole in thesemiconductor die from the one side of the semiconductor die to theopposite side of the semiconductor die (1020), and detecting, by thecurrent sensor in the semiconductor die, a signal proportional tocurrent flow in the conductor wire passing through the hole in thesemiconductor die (1030).

The semiconductor die can be packaged in a sensor package having a passthrough hole extending from one side of the sensor package to anopposite side of the sensor package. In method 1000, disposing thesemiconductor die about the conductor wire 1020 may include placing thesensor package about the conductor wire with the conductor wire passingthrough the hole in the sensor package from the one side of the sensorpackage to the opposite side of the sensor package.

Further, in method 1000, detecting the signal proportional to thecurrent flow in the conductor wire passing through the hole in thesemiconductor die (1030) includes detecting a Hall effect voltage in asensor element (e.g., a Hall plate in the semiconductor die) and ordetecting an induced voltage in a Rogowski coil.

Specific structural and functional details disclosed herein are merelyrepresentative for purposes of describing example embodiments. Exampleembodiments, however, be embodied in many alternate forms and should notbe construed as limited to only the embodiments set forth herein. Forexample, in the embodiments described with reference to the figuresherein, a pass through hole extending from one side of the semiconductordie to an opposite side of the semiconductor die is shown as passingthrough a center portion of the semiconductor die. However, in alternateforms of the embodiments, a pass through hole may pass through anoff-center portion of the semiconductor die. Further, for example, inthe embodiments described with reference to the figures herein, a passthrough hole extending from one side of the semiconductor die to anopposite side of the semiconductor die is shown as having a generallycircular cross section. However, in alternate forms of the embodiments,a pass through hole extending from one side of the semiconductor die toan opposite side of the semiconductor die can have a non-circular (e.g.,an oval, a triangular, a square, a rectangular, a quadrilateral, apentagonal, or a hexagonal shape, etc.) cross section. Further, forexample, in the embodiments described with reference to the figuresherein, the semiconductor die is shown as having a generally circularshape (except for FIG. 4B, which shows a semiconductor die having ahexagonal shape). However, in alternate forms of the embodiments, thesemiconductor die can have a non-circular shape (e.g., an oval, atriangular, a square, a rectangular, a quadrilateral, a pentagonal, or ahexagonal shape, etc.). Some implementations may be implemented usingvarious semiconductor processing and/or packaging techniques. Someimplementations may be implemented using various types of semiconductorprocessing techniques associated with semiconductor substratesincluding, but not limited to, for example, Silicon (Si), GalliumArsenide (GaAs), Gallium Nitride (GaN), and/or so forth.

The terminology used herein is for the purpose of describing particularimplementations only and is not intended to be limiting of theimplementations. As used herein, the singular forms “a,” “an,” and “the”are intended to include the plural forms as well, unless the contextclearly indicates otherwise. It will be further understood that theterms “comprises,” “comprising,” “includes,” and/or “including,” whenused in this specification, specify the presence of the stated features,steps, operations, elements, and/or components, but do not preclude thepresence or addition of one or more other features, steps, operations,elements, components, and/or groups thereof.

It will also be understood that when an element, such as a layer, aregion, or a substrate, is referred to as being on, connected to,electrically connected to, coupled to, or electrically coupled toanother element, it may be directly on, connected or coupled to theother element, or one or more intervening elements may be present. Incontrast, when an element is referred to as being directly on, directlyconnected to or directly coupled to another element or layer, there areno intervening elements or layers present. Although the terms directlyon, directly connected to, or directly coupled to may not be usedthroughout the detailed description, elements that are shown as beingdirectly on, directly connected or directly coupled can be referred toas such. The claims of the application may be amended to reciteexemplary relationships described in the specification or shown in thefigures.

As used in this specification, a singular form may, unless definitelyindicating a particular case in terms of the context, include a pluralform. Spatially relative terms (e.g., over, above, upper, under,beneath, below, lower, and so forth) are intended to encompass differentorientations of the device in use or operation in addition to theorientation depicted in the figures. In some implementations, therelative terms above and below can, respectively, include verticallyabove and vertically below. In some implementations, the term adjacentcan include laterally adjacent to or horizontally adjacent to.

Example implementations of the present inventive concepts are describedherein with reference to cross-sectional illustrations that areschematic illustrations of idealized implementations (and intermediatestructures) of example implementations. As such, variations from theshapes of the illustrations as a result, for example, of manufacturingtechniques and/or tolerances, are to be expected. Thus, exampleimplementations of the present inventive concepts should not beconstrued as limited to the particular shapes of regions illustratedherein but are to include deviations in shapes that result, for example,from manufacturing. Accordingly, the regions illustrated in the figuresare schematic in nature and their shapes are not intended to illustratethe actual shape of a region of a device and are not intended to limitthe scope of example implementations.

It will be understood that although the terms “first,” “second,” etc.may be used herein to describe various elements, these elements shouldnot be limited by these terms. These terms are only used to distinguishone element from another. Thus, a “first” element could be termed a“second” element without departing from the teachings of the presentimplementations.

Unless otherwise defined, all terms (including technical and scientificterms) used herein have the same meaning as commonly understood by oneof ordinary skill in the art to which this present inventive conceptbelongs. It will be further understood that terms, such as those definedin commonly used dictionaries, should be interpreted as having a meaningthat is consistent with their meaning in the context of the relevant artand/or the present specification and will not be interpreted in anidealized or overly formal sense unless expressly so defined herein.

While certain features of the described implementations have beenillustrated as described herein, many modifications, substitutions,changes and equivalents will now occur to those skilled in the art. Itis, therefore, to be understood that the appended claims are intended tocover all such modifications and changes as fall within the scope of theimplementations. It should be understood that they have been presentedby way of example only, not limitation, and various changes in form anddetails may be made. Any portion of the apparatus and/or methodsdescribed herein may be combined in any combination, except mutuallyexclusive combinations. The implementations described herein can includevarious combinations and/or sub-combinations of the functions,components and/or features of the different implementations described.

1. A semiconductor die comprising: a semiconductor substrate of thesemiconductor die; a through hole in the semiconductor substrateextending from one side of the die to an opposite side of thesemiconductor die, the through hole configured to receive acurrent-carrying conductor there through; and at least one currentsensor coupled to the semiconductor substrate and configured to sensecurrent flow in the current-carrying conductor received in the throughhole, the semiconductor die including contact pads configured to receivesolder bumps configured to carry signals from the semiconductor die tooutside of the semiconductor die.
 2. The semiconductor die of claim 1,wherein the at least one current sensor includes an inductive sensor. 3.The semiconductor die of claim 1, wherein the at least one currentsensor includes a Hall effect sensor.
 4. The semiconductor die of claim3, wherein the semiconductor die further includes a magnetic fieldconcentrator coil disposed on a surface of the semiconductor die.
 5. Thesemiconductor die of claim 3, wherein the semiconductor die furtherincludes a magnetic field concentrator coil at least partially insertedin the semiconductor die.
 6. The semiconductor die of claim 1, whereinthe at least one current sensor includes one or more of an inductivesensor, a horizontal Hall effect sensor, and a vertical Hall effectsensor.
 7. The semiconductor die of claim 6, wherein the one or more ofan inductive sensor, a horizontal Hall effect sensor, and a verticalHall effect sensor are configured to concurrently sense both AC and DCcurrent flows through the current-carrying conductor received in thethrough hole.
 8. The semiconductor die of claim 1, wherein thesemiconductor die has a circular, an oval, a triangular, aquadrilateral, a pentagonal, or a hexagonal shape.
 9. The semiconductordie of claim 1, wherein the current-carrying conductor received in thethrough hole is galvanically isolated from the semiconductor die.
 10. Asensor package comprising: a semiconductor die including at least onecurrent sensor, the semiconductor die including a first pass throughhole extending from one side of the semiconductor die to an oppositeside of the semiconductor die, the semiconductor die including contactpads configured to receive solder bumps configured to carry signals fromthe semiconductor die to outside of the sensor package; and a secondpass through hole extending from one side of the sensor package to anopposite side of the sensor package, the second pass through hole beingaligned with the first pass through hole and configured to receive acurrent-carrying conductor, wherein the at least one current sensor isconfigured to sense current flow in the current-carrying conductorreceived in the second pass through hole.
 11. The sensor package ofclaim 10, wherein the current-carrying conductor received in the secondthrough hole is galvanically isolated from the sensor package.
 12. Thesensor package of claim 10, further comprising a lead frame attached tothe semiconductor die, the lead frame including a third pass throughhole aligned with the first pass through hole extending from the oneside of the semiconductor die to the opposite side of the semiconductordie.
 13. The sensor package of claim 12, wherein the lead frame extendsfrom inside of the sensor package to a free end outside the sensorpackage and is configured to carry signals from the semiconductor die tothe outside the sensor package.
 14. (canceled)
 15. The sensor package ofclaim 10, wherein a conducting material is disposed in the secondthrough hole and bounded by an upper contact pad and a lower contactpad, the upper contact pad configured to be attached to an end of acurrent-carrying wire, the lower contact pad configured to receive asolder bump connection to complete a current path through thecurrent-carrying wire across the sensor package.
 16. The sensor packageof claim 10, wherein the semiconductor die has a hexagonal shape. 17.The sensor package of claim 10, wherein the at least one current sensorincludes one or more of an inductive sensor, a horizontal Hall effectsensor, and a vertical Hall effect sensor.
 18. The sensor package ofclaim 17, wherein the at least one current sensor including one or moreof an inductive sensor, a horizontal Hall effect sensor, and a verticalHall effect sensor is configured to concurrently sense both AC and DCcurrent flows through the current-carrying conductor received in thesecond pass through hole.
 19. A method comprising: disposing a currentsensor in a semiconductor die, the sensor die having a pass through holeextending from one side of the semiconductor die to an opposite side ofthe semiconductor die; disposing the semiconductor die about a conductorwire by passing the conductor wire through the hole in the semiconductordie from the one side of the semiconductor die to the opposite side ofthe semiconductor die; and detecting, by the current sensor, a signalproportional to current flow in the conductor wire passing through thehole in the semiconductor die, the detecting including at least one ofdetecting a Hall effect voltage in a sensor element or detecting aninduced voltage in an inductive coil.
 20. The method of claim 19,wherein the semiconductor die is packaged in a sensor package having apass through hole extending from one side of the sensor package to anopposite side of the sensor package, and wherein placing thesemiconductor die about the conductor wire includes placing the sensorpackage about the conductor wire with the conductor wire passing throughthe hole in the sensor package from the one side of the sensor packageto the opposite side of the sensor package.
 21. The method of claim 20,wherein placing the semiconductor die about the conductor wire includesgalvanically isolating the sensor package from the conductor wirepassing through the hole in the sensor package from the one side of thesensor package to the opposite side of the sensor package. 22.(canceled)
 23. A current sensor package comprising: a current sensorconfigured to sense current flow in a current carrying conductor that isdisposed at least partially through a hole in the current sensorpackage; and electrical insulation disposed between and the currentcarrying conductor and the current sensor, the electrical insulationblocking current flow from the current carrying conductor to the currentsensor, the current sensor sensing the current flow being configured todetect at least one of a Hall effect voltage in a sensor element or aninduced voltage in an inductive coil.
 24. The current sensor package ofclaim 23, wherein the current sensor includes one or more of aninductive sensor, a horizontal Hall effect sensor, and a vertical Halleffect sensor.
 25. A semiconductor die comprising: a semiconductorsubstrate of the semiconductor die; a through hole in the semiconductorsubstrate extending from one side of the die to an opposite side of thesemiconductor die, the through hole configured to receive acurrent-carrying conductor there through; and at least one currentsensor coupled to the semiconductor substrate and configured to sensecurrent flow in the current-carrying conductor received in the throughhole, the current sensor sensing the current flow being configured todetect at least one of a Hall effect voltage in a sensor element or aninduced voltage in an inductive coil.
 26. The semiconductor die of claim25, wherein the at least one current sensor is configured toconcurrently sense both AC and DC current flows through thecurrent-carrying conductor received in the through hole.